1. The plaintiff's claim is dismissed.

2. The costs of lawsuit shall be borne by the Plaintiff.

1. Basic facts

A. The name of the Plaintiff’s invention 1) invention: B) the international filing date / the priority claim date / the translation submission date / the application number: C/C/D3 on September 26, 2012 / the claims / d3 on April 27, 2015) / the claims / the claim 1 / the claim contains at least Dopology, Dopology, glass, and organic discompacta (hereinafter referred to as “content 1”).

(3) The head of the Free Trade Association shall convert Te into TE2, convert 35 to 90 cm, Zn into ZnO, convert Bi into Bi2O3, convert 5 to 5 to 50 cm, and 1 to 20 cm, converting Bi into Bi2O3, and incorporate at least one kind of 1 selected among Li, Na, and K into bulk, converting at least one kind of 0.1 to 15 cm (hereinafter referred to as “entent 2”).

(2) Doespheroids (hereinafter referred to as “paragraph (1) invention”) characterized by

【Claim 2-7 【Request 2-7】 omitted

(a) are related to solar batteries manufactured using any diversoid and any such diversatory paint suitable for the formation of the whole gap of the solar batteries in the technical field;

(1) b) an identification number;

In previous technical issues and prior art literature (No. 2011-96747 of the Patent Gazette in Japan), the contact point between the hydroelectric voltage and semiconductor machine board is low, and this is trying to improve the cell characteristics of solar batteries. The contact point depends on the creation of a glass range.

In other words, it is difficult to maintain the contact base at a low level in a stable manner because the contact base is affected by mountainized telime or other additives (Umblin, Preamble, Preamble, etc.).

(2) The invention is composed of these circumstances, and in light of the foregoing, the energy conversion efficiency is high, and the cell characteristics are good by using the tampers and the tampers suitable for the creation of the electric gap of solar batteries, which can lower the contact base between the electric gap and semiconductor base plates.